Company Filing History:
Years Active: 2021-2022
Title: The Innovative Contributions of Inventor Hongro Yun
Introduction
Hongro Yun, an accomplished inventor based in Wonju-si, South Korea, has made significant strides in the field of semiconductor technology. His expertise and innovative spirit have led to the development of two notable patents that contribute to advancements in thin film transistors (TFT) and semiconductor layers.
Latest Patents
Hongro Yun is the inventor behind two notable patents:
1. **Tin Oxide Layer, TFT Having the Same as Channel Layer, and Manufacturing Method for the TFT**: This patent presents a tin oxide layer and a thin film transistor that incorporates a polycrystalline thin film with a preferred orientation in the [001] direction. The resultant TFT includes a gate electrode, a tin oxide channel layer disposed on the gate electrode, a gate insulating film, and source and drain electrodes that are electrically connected to the ends of the channel layer.
2. **P-Type Semiconductor Layer, P-Type Multilevel Element, and Manufacturing Method for the Element**: This innovative patent outlines a P-type multilevel element comprising a gate electrode overlaid by an active structure. This design features a gate insulating layer and source and drain electrodes, along with a distinct barrier layer separating two P-type active layers, each with different threshold voltages for channel formation.
Career Highlights
Currently, Hongro Yun is affiliated with the Industry-University Cooperation Foundation of Hanyang University, where his research focuses on developing advanced semiconductor technologies. His contributions have been influential in pushing the boundaries of electronic components, paving the way for enhanced performance in electronic devices.
Collaborations
Throughout his career, Hongro Yun has collaborated with esteemed colleagues such as Myung Mo Sung and Hongbum Kim. Their teamwork has fostered an environment of innovation and shared knowledge, resulting in impactful advancements in their field.
Conclusion
Hongro Yun's pioneering work in the realm of thin film transistors and semiconductor layers highlights the importance of research and collaboration in driving technological progress. With his two patents, Yun is making substantial contributions that will influence the future of electronic devices, showcasing the vital role of inventors in shaping our technological landscape.