The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Dec. 09, 2019
Applicant:
Industry-university Cooperation Foundation Hanyang University, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/221 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); H01L 29/221 (2013.01); H01L 29/2206 (2013.01); H01L 29/66742 (2013.01);
Abstract
Provided are a tin oxide layer, a thin film transistor (TFT) having the same as a channel layer, and a method for manufacturing the TFT. The TFT comprises a gate electrode, a tin oxide channel layer disposed on the gate electrode and being a polycrystalline thin film with preferred orientation in a [001] direction, a gate insulating film disposed between the gate electrode and the channel layer, and source and drain electrodes electrically connected to both ends of the channel layer, respectively.