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Years Active: 1999-2003
Title: Innovations of Hongning Yang
Introduction
Hongning Yang is a notable inventor based in Vancouver, WA (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of dielectric materials for integrated circuits. With a total of 5 patents to his name, Yang's work has had a substantial impact on the industry.
Latest Patents
One of his latest patents focuses on the use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon. This plasma enhanced chemical vapor deposition (PECVD) process involves several steps. First, a fluorinated amorphous carbon (a-F:C) layer is deposited on a substrate using a fluorine-containing gas, such as octafluorocyclobutane, and a carbon-containing gas, like methane, in a specific ratio. The resulting a-F:C layer exhibits an internal compressive stress of approximately 28 MPa. After deposition, the film undergoes annealing at around 400°C for two hours. Subsequently, a hydrogen-free hydrogeneated silicon carbide adhesion promoter layer is deposited on the a-F:C layer. This layer is created using silane and methane as deposition gases, resulting in a silicon carbide layer with an internal compressive stress of approximately 400 MPa. Finally, a silicon nitride layer is deposited on the adhesion promoter layer, which has an internal compressive stress of approximately 240 MPa. This innovative stacked layer structure demonstrates thermal stability and resists peeling and cracking up to 450°C, while maintaining a dielectric constant (k) as low as 2.5.
Career Highlights
Throughout his career, Hongning Yang has worked with prominent companies such as Sharp Laboratories of America, Inc. and Sharp Microelectronics Technology, Inc. His expertise in semiconductor materials and processes has positioned him as a valuable asset in the field.
Collaborations
Yang has collaborated with notable colleagues, including Tue H Nguyen and David R Evans, contributing to advancements in semiconductor technology.
Conclusion
Hongning Yang's innovative work in the field of semiconductor technology, particularly through his patented processes, showcases his significant contributions to enhancing the performance and reliability of integrated circuits. His achievements reflect the importance of innovation in driving technological advancements.