The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
Feb. 13, 1998
Hongning Yang, Vancouver, WA (US);
Tue Nguyen, Vancouver, WA (US);
Sharp Microelectronics Technology, Inc., Camas, WA (US);
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The invention provides a process for depositing fluorinated amorphous carbon (a-F:C) films on IC wafers to provide a low-k interconnect dielectric material. The process, carried out in a PECVD chamber, introduces silane gas (SiH.sub.4) into the mixture of C.sub.4 F.sub.8 and CH.sub.4 gases used to deposit a-F:C films. The silane helps to decrease the fluorine etchants in the deposited film, helping to improve the crosslinks in the deposited product. Film produced in accordance with the present invention has both low-k, generally below 2.4, and high thermal stability, generally above 440.degree. C., allowing for higher thermal anneal temperatures.