Hongmei Li

Title: Innovations of Inventor Hongmei Li

Introduction

Hongmei Li is a prominent inventor based in Williston, Vermont, known for her significant contributions to the field of integrated circuit development. With a total of eight patents to her name, she has made remarkable advancements in technology that have impacted various industries.

Latest Patents

One of her latest patents is focused on integrated circuit development using density-aware border fill. This invention involves setting a fill mode for a border region of a layer of a macro of an integrated circuit. The border region's depth is defined by a multiple of the size of a tile used to select an area of the integrated circuit for the implementation of a design rule check. The fill mode indicates a fill percentage value or level of fill to be implemented in the border region of the layer of the macro. The filling of the border region is performed based on the fill mode, and the integrated circuit is finalized and fabricated based on the fill and passing the design rule check.

Another notable patent is for a multi-gate field effect transistor (FET) that includes an isolated FIN body. This invention provides a multi-gate FET formed on a bulk substrate that includes an isolated fin and methods of forming the same. In one embodiment, the multi-gate FET includes a plurality of silicon fin structures formed on the bulk substrate, each with a body region, a source region, and a drain region. The bottom portion of the body region of each silicon fin structure has a tipped shape to isolate it from the bulk substrate, while the plurality of silicon fin structures are attached to the bulk substrate via at least a portion of the source region, or at least a portion of the drain region, or both.

Career Highlights

Throughout her career, Hongmei Li has worked with notable companies such as IBM and Globalfoundries Inc. Her experience in these leading technology firms has allowed her to develop and refine her innovative ideas, contributing to her success as an inventor.

Collaborations

Hongmei has collaborated with several talented individuals in her field, including JunJun Li and Michel J Abou-Khalil. These collaborations have further enhanced her work and led to the development of groundbreaking technologies.

Conclusion

In summary, Hongmei Li is a distinguished inventor whose work in integrated circuit development and multi-gate field effect transistors has made a significant impact on technology. Her innovative