International Business Machines Corporation

Globalfoundries Inc.

Hongmei Li

JunJun Li

Souvick Mitra

Christopher Stephen Putnam

Michel J Abou-Khalil

Robert J Gauthier, Jr

Rasit Onur Topaloglu

Richard Quimby Williams

Zhenrong Jin

Peter A Smith

Basanth Jagannathan

Kai Zhao

Junjun Li

Robert Gauthier

Xiaoping Liang

Jeremy R Tolbert

Christopher S Putnam

Aspects of the invention include setting a fill mode for a border region of a layer of a macro of an integrated circuit. The border region has a depth defined by a multiple of the size of a tile used to select an area of the integrated circuit for implementation of a design rule check, and the fill mode indicates a fill percentage value or level of fill to be implemented in the border region of the layer of the macro. A fill of the border region of the layer of the macro is performed based on the fill mode. The integrated circuit is finalized and fabricated based on the performing of the fill and passing the design rule check.

Integrated circuit development using density-aware border fill

Aspects of the disclosure provide a multi-gate field effect transistor (FET) formed on a bulk substrate that includes an isolated fin and methods of forming the same. In one embodiment, the multi-gate FET includes: a plurality of silicon fin structures formed on the bulk substrate, each silicon fin structure including a body region, a source region, and a drain region; wherein a bottom portion the body region of each silicon fin structure includes a tipped shape to isolate the body region from the bulk substrate, and wherein the plurality of silicon fin structures are attached to the bulk substrate via at least a portion of the source region, or at least a portion of the drain region, or both.

Multi-gate field effect transistor (FET) including isolated FIN body

Methods to fabricate a stacked nanowire field effect transistor (FET) with reduced gate resistance are provided. The nanowire stack in the stacked nanowire FET can be provided by first forming a material stack of alternating sacrificial material layers and nanowire material layer. The sacrificial material layers and selected nanowire material layers in the material stack are subsequently removed to increase a vertical distance between two active nanowire material layers.

Nanowire structure with selected stack removed for reduced gate resistance and method of fabricating same

Multi-gate field effect transistor (FET) including isolated fin body

The disclosure relates to the analysis of compensated layout shapes. A method in accordance with an embodiment includes: analyzing a semiconductor layout using a bucket structure, the layout including a semiconductor device; and applying a pattern template to a content of the bucket structure to identify a shape adjacent to the semiconductor device; wherein the pattern template is derived from layout groundrules.

Analysis of compensated layout shapes

An external current injection source is provided to individual fingers of a multi-finger semiconductor device to provide the same trigger voltage across the multiple fingers. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.

Structure and circuit technique for uniform triggering of multifinger semiconductor devices with tunable trigger voltage

S-parameter data is measured on an embedded device test structure, an open dummy, and a short dummy. A 4-port network of the pad set parasitics of the embedded device test structure is modeled by a parameterized netlist containing a lumped element network having at least one parameterized lumped element. The S-parameter data across a range of measurement frequencies is fitted with the parameterized netlist employing the at least one parameterized lumped element as at least one fitting parameter for the S-parameter data. Thus, the fitting method is a multi-frequency fitting for the at least one parameterized lumped element. A 4-port Y-parameter (admittance parameter) is obtained from the fitted parameterized netlist. The Y-parameter of the device under test is obtained from the measured admittance of the embedded device test structure and the calculated 4-port Y parameter.

System and method for de-embedding a device under test employing a parametrized netlist

A design structure for a circuit providing the same trigger voltage across the multiple fingers is provided, which comprises a data representing an external current injection source connected to individual fingers of a multi-finger semiconductor device. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.

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Williston, VT, United States of America

Hongmei Li