Maplewood, NJ, United States of America

Honghua Du

This inventor holds 2 USPTO granted patents. Top assignee: US Government as Represented by the Secretary of the Army. Active years: 1999-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Honghua Du. Retrieved from https://idiyas.com/inventor/honghua-du

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1999-2000

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2 patents (USPTO):Explore Patents

Title: Innovations of Honghua Du in Silicon Carbide Technology

Introduction

Honghua Du is a notable inventor based in Maplewood, NJ (US). He has made significant contributions to the field of silicon carbide technology, holding 2 patents that showcase his innovative methods and designs. His work primarily focuses on enhancing the annealing process of silicon carbide, which is crucial for various applications in electronics and materials science.

Latest Patents

Honghua Du's latest patents include a method of annealing silicon carbide for activation of ion-implanted materials. This invention features a unique crucible designed for high-temperature annealing of silicon carbide. The crucible consists of a peripheral wall, at least two compartments separated by an inner wall, and a lid that separates the compartments from the surroundings while allowing a passageway between them. The materials used for the peripheral wall, inner wall, and lid are specifically chosen for their ability to withstand high annealing temperatures. The process involves placing an SiC wafer in one compartment and SiC powder in another, with the powder serving to prevent decomposition of the wafer during the annealing process. The crucible is then heated to a temperature sufficient to anneal the SiC wafer, ideally after evacuating air and flowing an inert gas around the crucible.

Career Highlights

Honghua Du is currently employed by the US Government as represented by the Secretary of the Army. His role involves applying his expertise in silicon carbide technology to support various governmental projects and initiatives. His innovative approaches have contributed to advancements in materials science and engineering.

Collaborations

Honghua Du collaborates with Joseph R Flemish, working together to enhance the research and development of silicon carbide applications. Their partnership has led to significant advancements in the field, showcasing the importance of teamwork in innovation.

Conclusion

Honghua Du's contributions to silicon carbide technology through his patents and career at the US Government highlight his role as a key innovator in the field. His work not only advances scientific understanding but also supports practical applications in various industries.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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