Honggun Kim

Title: Innovations of Honggun Kim in Capacitor Technology

Introduction

Honggun Kim is an accomplished inventor based in San Jose, CA. He has made significant contributions to the field of capacitor technology, particularly through his innovative work on silicon boron nitride materials. His expertise and dedication to advancing technology have led to the development of a notable patent.

Latest Patents

Honggun Kim holds a patent for the "PECVD of SiBN thin films with low leakage current." This invention focuses on capacitor devices that incorporate silicon boron nitride with a high concentration of boron. The patent details a capacitor device that includes a stopper layer made of silicon boron nitride, a dielectric layer, vias formed within both layers, and metal contacts at the bottoms of the vias. Additionally, it features a nitride barrier layer containing a metal nitride material and an oxide layer with holes or voids. The silicon boron nitride in this invention contains approximately 18 atomic percent to about 50 atomic percent of boron.

Career Highlights

Honggun Kim is currently employed at Applied Materials, Inc., where he continues to push the boundaries of innovation in semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of capacitor devices, making significant strides in the industry.

Collaborations

Throughout his career, Honggun Kim has collaborated with talented professionals such as Chuanxi Yang and Hang Yu. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Honggun Kim's contributions to capacitor technology through his innovative patent demonstrate his commitment to advancing the field. His work at Applied Materials, Inc. and collaborations with esteemed colleagues further highlight his impact on the industry.