Applied Materials, Inc.

Honggun Kim

Deenesh Padhi

Karthik Janakiraman

Rui Cheng

Zubin Huang

Diwakar N Kedlaya

Hang Yu

Chuanxi Yang

Euhngi Lee

Capacitor devices containing silicon boron nitride with high boron concentration are provided. In one or more examples, a capacitor device is provided and contains a stopper layer containing silicon boron nitride and disposed on a substrate, a dielectric layer disposed on the stopper layer, vias formed within the dielectric layer and the stopper layer, metal contacts disposed on bottoms of the vias, a nitride barrier layer containing a metal nitride material and disposed on walls of the vias and disposed on the metal contacts, and an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer contains one or more holes or voids formed therein. The silicon boron nitride contains about 18 atomic percent (at %) to about 50 at % of boron.

PECVD of SiBN thin films with low leakage current

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San Jose, CA, United States of America

Honggun Kim