The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Apr. 29, 2024
Applied Materials, Inc., Santa Clara, CA (US);
Chuanxi Yang, Los Altos, CA (US);
Hang Yu, Woodland, CA (US);
Sanjay Kamath, Fremont, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Honggun Kim, San Jose, CA (US);
Euhngi Lee, Santa Clara, CA (US);
Zubin Huang, Santa Clara, CA (US);
Diwakar N. Kedlaya, San Jose, CA (US);
Rui Cheng, Santa Clara, CA (US);
Karthik Janakiraman, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Capacitor devices containing silicon boron nitride with high boron concentration are provided. In one or more examples, a capacitor device is provided and contains a stopper layer containing silicon boron nitride and disposed on a substrate, a dielectric layer disposed on the stopper layer, vias formed within the dielectric layer and the stopper layer, metal contacts disposed on bottoms of the vias, a nitride barrier layer containing a metal nitride material and disposed on walls of the vias and disposed on the metal contacts, and an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer contains one or more holes or voids formed therein. The silicon boron nitride contains about 18 atomic percent (at %) to about 50 at % of boron.