Company Filing History:
Years Active: 2021-2025
Title: Innovations of Hongfeng Jin in Semiconductor Technology
Introduction
Hongfeng Jin is a prominent inventor based in Wuxi, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on developing advanced semiconductor devices and manufacturing methods that enhance performance and reliability.
Latest Patents
One of his latest patents is for a semiconductor device and manufacturing method. This invention includes a detailed process for providing a substrate of a first conductivity type and forming doped regions of a second conductivity type. The method addresses potential morphological changes in photoresist due to high temperatures during etching, ensuring the effectiveness of high-energy ion implantation processes.
Another notable patent is for a Metal-Insulator-Metal (MIM) capacitor and its manufacturing method. This method involves forming a first metal layer on a semiconductor substrate and creating an anti-reflection layer. The process defines an MIM capacitor region, where the first metal layer serves as the lower electrode plate, and the anti-reflection layer acts as the dielectric layer.
Career Highlights
Hongfeng Jin is currently employed at CSMC Technologies Fab2 Co., Ltd. His work at this company has allowed him to further his research and development in semiconductor technologies, contributing to the advancement of the industry.
Collaborations
He collaborates with talented coworkers, including Huajun Jin and Guipeng Sun. Their combined expertise fosters innovation and drives the development of cutting-edge technologies in their field.
Conclusion
Hongfeng Jin's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor devices and manufacturing methods.