Csmc Technologies Fab2 Co., Ltd.

Hongfeng Jin

Guipeng Sun

Huajun Jin

Feng Lin

Yu Huang

Ruibin Cao

Xiang Qin

Chunxu Li

A semiconductor device and a manufacturing method therefor are disclosed. The method includes: providing a substrate of a first conductivity type; forming doped regions of a second conductivity type in the substrate, the doped regions including adjacent first and second drift regions, wherein the second conductivity type is opposite to the first conductivity type; forming a polysilicon film on the substrate, the polysilicon film covering the doped regions; forming patterned photoresist on the polysilicon film, which covers the first and second drift regions, and in which the polysilicon film above a reserved region for a body region between the first and second drift regions is exposed; and forming the body region of the first conductivity type in the reserved region by performing a high-energy ion implantation process, the body region having a top surface that is flush with top surfaces of the doped regions, the body region having a bottom surface that is not higher than bottom surfaces of the doped regions. The problem of morphological changes possibly experienced by the photoresist due to a high temperature in an etching process, which may lead to an impaired effect of the high-energy ion implantation process, can be circumvented.

Semiconductor device and manufacturing method therefor

An MIM capacitor and a manufacturing method therefor. The manufacturing method comprises: providing a semiconductor substrate, and forming a first metal layer on the semiconductor substrate; forming an anti-reflection layer on the first metal layer; performing photoetching and etching on the first metal layer and the anti-reflection layer so as to define an MIM capacitor region, wherein the first metal layer in the MIM capacitor region serves as a lower electrode plate of the MIM capacitor, and the anti-reflection layer in the MIM capacitor region serves as a dielectric layer of the MIM capacitor; and forming an upper electrode plate of the MIM capacitor on the anti-reflection layer in the MIM capacitor region.

MIM capacitor and manufacturing method therefor

Provided in the present invention are an LDMOS component, a manufacturing method therefor, and an electronic device, comprising: a semiconductor substrate (); a drift area () provided in the semiconductor substrate; a gate electrode structure () provided on a part of the surface of the semiconductor substrate and covers a part of the surface of the drift area; a source electrode () and a drain electrode () respectively provided in the semiconductor substrate on either side of the gate electrode structure, where the drain electrode is provided in the drift area and is separated from the gate electrode structure; a metal silicide barrier layer () covering the surface of at least a part of the semiconductor substrate between the gate electrode structure and the drain electrode; and a first contact hole () provided on the surface of at least a part of the metal silicide barrier layer.

LDMOS component, manufacturing method therefor, and electronic device

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Wuxi, China

Hongfeng Jin