The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Aug. 03, 2018
Csmc Technologies Fab2 Co., Ltd., Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Abstract
Provided in the present invention are an LDMOS component, a manufacturing method therefor, and an electronic device, comprising: a semiconductor substrate (); a drift area () provided in the semiconductor substrate; a gate electrode structure () provided on a part of the surface of the semiconductor substrate and covers a part of the surface of the drift area; a source electrode () and a drain electrode () respectively provided in the semiconductor substrate on either side of the gate electrode structure, where the drain electrode is provided in the drift area and is separated from the gate electrode structure; a metal silicide barrier layer () covering the surface of at least a part of the semiconductor substrate between the gate electrode structure and the drain electrode; and a first contact hole () provided on the surface of at least a part of the metal silicide barrier layer.