Youngin Kyoungki-do, South Korea

Hong Seon Yan


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Innovations of Hong Seon Yan in Semiconductor Technology

Introduction: Hong Seon Yan is a notable inventor based in Youngin, Kyoungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of capacitors for memory devices. His innovative work has led to advancements that enhance the performance and efficiency of semiconductor devices.

Latest Patents: Hong Seon Yan holds a patent for a "Capacitor for semiconductor memory device and method of manufacturing the same." This invention discloses a capacitor designed to increase storage capacitance while preventing leakage current. The patent outlines a method where a lower electrode is formed on a semiconductor substrate, followed by surface treatment to prevent the generation of a natural oxide layer. A TaON layer is then deposited as a dielectric layer, with impurities crystallized and out-diffused. Finally, an upper electrode is deposited on the TaON layer, which is formed through a chemical vapor reaction of tantalum obtained from oxygen and ammonia gases in an LPCVD chamber.

Career Highlights: Hong Seon Yan is currently employed at Hyundai Electronics Industries Co. Ltd., where he continues to innovate in the semiconductor field. His work has been instrumental in developing technologies that improve the efficiency and reliability of electronic devices.

Collaborations: Hong Seon Yan has collaborated with notable colleagues, including Kee Jeung Lee and Il Keoun Han. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion: Hong Seon Yan's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key inventor in the industry. His work not only advances the field but also sets the stage for future developments in memory device technology.

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