The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Jun. 26, 2000
Kee Jeung Lee, Seoul, KR;
Il Keoun Han, Ich'on Kyoungki-do, KR;
Hong Seon Yan, Youngin Kyoungki-do, KR;
Abstract
Disclosed are a capacitor for a semiconductor device capable of increasing storage capacitance and preventing leakage current, and a method of manufacturing the same. According to the present invention, a lower electrode is formed on a semiconductor substrate. A surface of the lower electrode is surface-treated to prevent generation of a natural oxide layer. A TaON layer as a dielectric layer is deposited on the lower electrode. Impurities of the TaON layer are crystallized and out-diffused. And an upper electrode is deposited on the TaON layer. Herein, the TaON layer is formed by a chemical vapor reaction of Ta obtained from O gas and NH gas in an LPCVD chamber to which O gas and NH gas are supplied at a pressure of 0.1˜10 Torr at a temperature of 300˜600° C., respectively.