This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Globalwafers Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Hong-che Lin: Innovator in Epitaxial Structures
Introduction
Hong-che Lin is an inventor based in Hsinchu, Taiwan. He is known for his work in the field of epitaxial structures. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.
Latest Patent Applications
One of his notable patent applications is titled "METHOD OF MANUFACTURING EPITAXIAL STRUCTURE AND EPITAXIAL STRUCTURE." This method involves several steps, including providing a substrate and forming a first buffer layer above it. The process also includes creating a roughened layer through a sequence of low-temperature and high-temperature growth steps. The first low-temperature growth step forms an intrinsically doped structure, while the high-temperature growth step results in an extrinsically doped structure. The application outlines the formation of a second buffer layer and a channel layer above the roughened layer, emphasizing the specific material compositions and doping concentrations involved.
Conclusion
Hong-che Lin's contributions to the field of epitaxial structures demonstrate his innovative approach to manufacturing techniques. His latest patent applications reflect a commitment to advancing technology in this area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile