Hong-Che Hsiue

Title: Innovations of Hong-Che Hsiue in Semiconductor Technology

Introduction

Hong-Che Hsiue is a prominent inventor based in Chiao-Yi, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced materials and processes. His work has been instrumental in enhancing the performance of electronic devices.

Latest Patents

One of Hong-Che Hsiue's notable patents is the "Advanced titanium silicide process for very narrow polysilicon lines." This innovative process focuses on forming a low resistance titanium silicide layer, which is crucial for narrow width polycide gate structures. The method involves a combination of ion implantation procedures, both before and after titanium deposition. This approach effectively restricts excessive movement of silicon from the polysilicon gate structure and the source/drain region into the titanium silicide layer during the anneal cycles. By limiting the silicon content in the titanium silicide layer, Hsiue's process enables the use of low resistance layers for polycide gate structures with widths narrower than 0.20 micrometers.

Career Highlights

Hong-Che Hsiue is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His expertise and innovative approaches have contributed to the company's advancements in semiconductor manufacturing.

Collaborations

Throughout his career, Hsiue has collaborated with notable colleagues, including Yuan-Chang Huang and Ding-Dar Hu. These collaborations have fostered a productive environment for innovation and development in semiconductor technologies.

Conclusion

Hong-Che Hsiue's contributions to semiconductor technology, particularly through his patented processes, have significantly impacted the industry. His work continues to influence advancements in electronic device performance and manufacturing techniques.