The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Sep. 03, 1999
Yuan-Chang Huang, Hsin-Chu, TW;
Ding-Dar Hu, Taichung, TW;
Hong-Che Hsiue, Chiao-Yi, TW;
Chao-Ray Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A process for forming a low resistance, titanium silicide layer, for use as a component of a narrow width, polycide gate structure, has been developed. The process features a combination of ion implantation procedures, performed prior to, and after, titanium deposition. The combination of ion implantation procedures restricts excessive movement of silicon, from a polysilicon gate structure, as well as from a source/drain region, into the forming titanium silicide layer, during subsequent anneal cycles used to form the titanium silicide layer. The ability to limit the amount of silicon, in the titanium silicide layer, allows a low resistance, titanium silicide layer to be used for polycide gate structures, with a width narrower than 0.20 micrometers.