This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Micron Technology Incorporated. Active years: 2025-2026.
Company Filing History:
Years Active: 2025-2026
Title: Hojung Yun - Innovator in Peak Power Management Data Burst Communication
Introduction
Hojung Yun is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of memory devices, particularly in the area of peak power management data burst communication. His innovative work has led to the development of a patent that addresses critical aspects of data transfer efficiency.
Latest Patents
Hojung Yun holds a patent for a memory device that includes memory dies. Each memory die features a memory array and control logic, which work together to implement peak power management (PPM) data burst communication. The patent outlines operations such as monitoring data bursts, detecting current reservation triggers, and reserving current based on data transfer speeds. This invention enhances the efficiency of memory devices by optimizing power consumption during data bursts.
Career Highlights
Hojung Yun is currently employed at Micron Technology Incorporated, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and effective for various applications.
Collaborations
Hojung has collaborated with talented coworkers, including Liang Yu and Jonathan Scott Parry. Their combined expertise contributes to the innovative environment at Micron Technology Incorporated.
Conclusion
Hojung Yun is a prominent inventor whose work in peak power management data burst communication has made a significant impact on memory technology. His contributions continue to shape the future of efficient data transfer in memory devices.