Hoising Kwok

Title: Hoising Kwok: Innovator in Polysilicon Technology

Introduction

Hoising Kwok is a notable inventor based in Shenzhen, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of polysilicon thin films and TFT structures. His innovative approach has led to advancements that enhance the quality and performance of semiconductor devices.

Latest Patents

Hoising Kwok holds a patent for a manufacture method of polysilicon thin film and polysilicon TFT structure. This invention outlines a method that includes providing a substrate and forming a polysilicon thin film on it. The thickness of the polysilicon thin film is tailored to meet the requirements for manufacturing semiconductor elements. The method also involves silicon self-ion implantation to improve the quality of the polysilicon thin film by reducing defect concentrations at the grain boundaries.

Career Highlights

Kwok is associated with Shenzhen China Star Optoelectronics Technology Co., Ltd., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of polysilicon TFT structures, which are crucial for enhancing carrier mobility and reducing threshold voltage in semiconductor devices.

Collaborations

He has collaborated with notable colleagues such as Liangfen Zhang and Shuichih Lien, contributing to the collective knowledge and innovation within their field.

Conclusion

Hoising Kwok's contributions to polysilicon technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and work at Shenzhen China Star Optoelectronics Technology Co., Ltd. highlight his role as a key player in advancing semiconductor technology.