Hwaseong-si, South Korea

Ho-Yun Jeon


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2017-2020

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Ho-Yun Jeon

Introduction

Ho-Yun Jeon is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and functionality of semiconductor devices.

Latest Patents

Ho-Yun Jeon's latest patents include innovative designs for semiconductor devices. One of his patents describes semiconductor devices that may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern is formed on a substrate and features a plurality of protrusions that extend upward. Each conductive pattern is positioned on the protrusions and has a sidewall inclined at an angle between 80 degrees and 135 degrees relative to the substrate's top surface. Additionally, the barrier layer covers the top surface and sidewalls of the conductive patterns, while the insulating interlayer is formed on both the diffusion prevention insulation pattern and the barrier layer, incorporating air gaps between neighboring conductive patterns.

Another patent focuses on a semiconductor device with a conductive liner. This device includes an insulating interlayer on a substrate, along with a first protection pattern, a first barrier pattern, a first adhesion pattern, and a first conductive pattern. The insulating interlayer features a via hole and a first trench, with the via hole extending through its lower portion. The first trench connects to the via hole and extends through the upper portion of the insulating interlayer. The first protection pattern covers the lower surface and sidewalls of the via hole and part of the first trench, utilizing a conductive material. The first barrier pattern covers the protection pattern and the upper sidewall of the trench, while the first adhesion pattern is placed on top of the barrier pattern. Finally, the first conductive pattern fills the via hole and the trench.

Career Highlights

Ho-Yun Jeon is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced semiconductor devices that are crucial for modern electronics.

Collaborations

Throughout his career, Ho-Yun Jeon has collaborated with notable colleagues, including Rak-Hwan Kim and Byung-Hee Kim. These collaborations have fostered innovation and contributed to the success of their projects.

Conclusion

Ho-Y

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