The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Nov. 07, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Ho-Yun Jeon, Hwaseong-si, KR;
Rak-Hwan Kim, Suwon-si, KR;
Byung-Hee Kim, Seoul, KR;
Kyoung-Hee Nam, Seoul, KR;
Jong-Jin Lee, Seoul, KR;
Jae-Won Hwang, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor device includes an insulating interlayer disposed on a substrate, a first protection pattern, a first barrier pattern, a first adhesion pattern, and a first conductive pattern. The insulating interlayer includes a via hole and a first trench. The via hole extends through a lower portion of the insulating interlayer. The first trench is connected to the via hole and extends through an upper portion of the insulating interlayer. The first protection pattern covers a lower surface and sidewalls of the via hole and a portion of a lower surface and a lower sidewall of the first trench, and includes a conductive material. The first barrier pattern covers the protection pattern and an upper sidewall of the first trench. The first adhesion pattern covers the first barrier pattern. The first conductive pattern is disposed on the first adhesion pattern, and fills the via hale and the first trench.