Location History:
- Kyungsangbuk-do, KR (2004)
- Euiseong-gun, KR (2004 - 2006)
- Kyungbuk, KR (2007)
- Pohang, KR (2015)
Company Filing History:
3 out of 49 
1 out of 49,791 
1 out of 738 Years Active: 2004-2015
Title: Innovations by Inventor Ho Won Jang
Introduction
Ho Won Jang, an esteemed inventor based in Pohang, South Korea, has made significant contributions to the fields of semiconductor technology and metal electrode formation. With a total of five patents to his name, his work reflects a deep understanding of advanced materials and manufacturing techniques.
Latest Patents
Among Ho Won Jang's latest patents are innovative methods for forming metal electrodes and manufacturing semiconductor light-emitting elements. His patented process involves providing a substrate with a semiconductor layer and applying a bonding metal layer and a reflective metal layer. This technique enhances the interface characteristics between the semiconductor layer and the electrode, leveraging a layer inversion phenomenon during heat treatment. The result is a uniform reflective metal layer that improves thermal stability and reduces contact resistance through enhanced hole generation under an oxygen atmosphere.
Another notable patent focuses on fabricating ohmic contacts on n-type gallium nitride (GaN) at room temperature using plasma surface treatment. This method involves employing a chlorine gas Inductively Coupled Plasma (ICP) etch process prior to forming low contact resistance metal contacts on the doped GaN films, incorporating alternating layers of titanium and aluminum for optimal performance.
Career Highlights
Over the years, Ho Won Jang has been associated with prestigious institutions and corporations. He has played pivotal roles at the Pohang University of Science and Technology Foundation and LG Electronics Inc., where his innovative approaches to semiconductor technologies have been instrumental in advancing research and development efforts.
Collaborations
Throughout his career, Ho Won Jang has collaborated with notable peers, including Jong Lam Lee and Jong-Lam Lee. These collaborations have further enriched his research endeavors, promoting knowledge exchange and enhancing the quality of innovations in semiconductor and metal electrode technologies.
Conclusion
Ho Won Jang continues to be a leading figure in the realm of semiconductor innovation. His patents not only demonstrate his expertise but also contribute significantly to technological advancements in the industry. As he progresses in his career, the impact of his inventions is expected to resonate within the field for years to come.