The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Mar. 22, 2002
Applicants:
Jong Lam Lee, Kyungbuk, KR;
Ho Won Jang, Kyungbuk, KR;
Jong Kyu Kim, Seoul, KR;
Changmin Jeon, Seoul, KR;
Inventors:
Jong Lam Lee, Kyungbuk, KR;
Ho Won Jang, Kyungbuk, KR;
Jong Kyu Kim, Seoul, KR;
Changmin Jeon, Seoul, KR;
Assignee:
LG Electronics Inc., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:HO prior to metal contact formation.