Changmin Jeon

Title: Changmin Jeon: Innovator in Gallium Nitride Technology

Introduction

Changmin Jeon is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of ohmic contacts on n-type gallium nitride (GaN). His innovative work has implications for various electronic applications.

Latest Patents

Changmin Jeon holds a patent for a method of fabricating ohmic contact on n-type gallium nitride (GaN) at room temperature through plasma surface treatment. This patent details a process for forming low contact resistance metal contacts on GaN films by treating the GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. The GaN is n-type and doped with silicon, while the metal contacts consist of alternating layers of titanium and aluminum. Additionally, the GaN film is dipped in a solution of hydrochloric acid and hydrogen peroxide prior to the formation of metal contacts.

Career Highlights

Changmin Jeon is currently employed at LG Electronics Inc., where he continues to advance his research and development efforts in semiconductor technologies. His work is pivotal in enhancing the performance and efficiency of electronic devices.

Collaborations

Changmin has collaborated with notable colleagues, including Jong Lam Lee and Ho Won Jang, contributing to a dynamic research environment that fosters innovation.

Conclusion

Changmin Jeon is a distinguished inventor whose work in gallium nitride technology is shaping the future of semiconductor applications. His contributions are vital to the ongoing advancements in electronic device performance.