The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2006
Filed:
Mar. 19, 2003
Applicants:
Jong Lam Lee, Pohang, KR;
Ho Won Jang, Euiseong-gun, KR;
Inventors:
Jong Lam Lee, Pohang, KR;
Ho Won Jang, Euiseong-gun, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
A p-type ohmic electrode in a gallium nitride based(GaN based) optical device and a fabrication method thereof. The p-type ohmic electrode in a GaN based optical device is fabricated using a rutile structure transition metal layer, such as an Ru, Ir or Os layer, or an oxide layer thereof, or using a double layer comprised of an Ru layer as a base layer and an Ni layer, an ITO layer or an AuO layer on the Ru layer. Thus, the p-type ohmic electrode is good in light transmittance and is thermally stable while having low contact resistance with the p-GaN layer.