Ho Sun Wee is an accomplished inventor based in Santa Clara, CA. He has made significant contributions to the field of materials science, particularly in the deposition methods for barrier and tungsten materials. With a total of 3 patents, his work has advanced the technology used in semiconductor manufacturing.

Latest Patents

Ho Sun Wee's latest patents focus on innovative methods for depositing barrier layers and tungsten materials on substrates. One of his notable patents describes a method that includes forming a barrier layer containing a cobalt silicide layer and a metallic cobalt layer. This method involves exposing the barrier layer to a soak gas containing a reducing gas during a soak process, followed by the formation of tungsten material over the barrier layer. Another patent outlines a process that involves forming a thin silicon-containing layer on the barrier layer using silane gas, followed by the deposition of a tungsten nucleation layer and a tungsten bulk layer through atomic layer deposition and chemical vapor deposition processes, respectively.

Career Highlights

Ho Sun Wee is currently employed at Applied Materials, Inc., a leading company in the semiconductor equipment industry. His work has been instrumental in developing advanced deposition techniques that enhance the performance and reliability of semiconductor devices.

Collaborations

Throughout his career, Ho Sun Wee has collaborated with notable colleagues, including Ki Hwan Yoon and Yonghwa Chris Cha. These collaborations have contributed to the successful development of innovative technologies in the field.

Conclusion

Ho Sun Wee's contributions to the field of materials science, particularly in barrier and tungsten materials, have established him as a prominent inventor. His innovative methods and patents continue to influence the semiconductor industry and drive advancements in technology.