The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Jan. 09, 2002
Ki Hwan Yoon, Sunnyvale, CA (US);
Yonghwa Chris Cha, San Jose, CA (US);
Sang Ho Yu, Sunnyvale, CA (US);
Hafiz Farooq Ahmad, Newark, CA (US);
Ho Sun Wee, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.