Guri, South Korea

Ho-Jung Sun

This inventor holds 1 USPTO granted patent. Top assignee: Hynix Semiconductor Inc.. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ho-Jung Sun. Retrieved from https://idiyas.com/inventor/ho-jung-sun-52s2gbs1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Ho-Jung Sun: Innovator in Semiconductor Capacitor Technology

Introduction

Ho-Jung Sun is a prominent inventor based in Guri, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of capacitors. His innovative methods have enhanced the performance and reliability of semiconductor devices.

Latest Patents

Ho-Jung Sun holds a patent for a "Method for forming a capacitor of a semiconductor device." This invention focuses on methods for forming capacitors with a stacked structure of metal layer-insulating film-metal layer. The storage electrode is formed of ruthenium (Ru), while the dielectric layer is made of tantalum oxide (Ta O) film. This method improves the formation of dense Ru film using a CVD method at high temperatures, thereby enhancing the electrical characteristics of the capacitor.

Career Highlights

Ho-Jung Sun is currently employed at Hynix Semiconductor Inc., a leading company in the semiconductor industry. His work has been instrumental in advancing capacitor technology, which is crucial for the performance of various electronic devices.

Collaborations

Ho-Jung Sun collaborates with Kyong Min Kim, contributing to the development of innovative semiconductor solutions. Their partnership has led to advancements in capacitor technology that benefit the industry.

Conclusion

Ho-Jung Sun's contributions to semiconductor capacitor technology demonstrate his expertise and commitment to innovation. His work continues to influence the field, paving the way for future advancements in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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