The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Dec. 10, 2002
Applicant:
Inventors:
Kyong Min Kim, Anyang, KR;
Ho-Jung Sun, Guri, KR;
Assignee:
Hynix Semiconductor Inc, Kyoungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 7/06 ;
U.S. Cl.
CPC ...
H01G 7/06 ;
Abstract
Methods for forming capacitors of semiconductor devices, and more specifically, to a method for forming a capacitor having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as 'Ru') and dielectric layer formed of tantalum oxide (Ta O ) film, which provides improved formation of dense Ru film using a CVD method at high temperature, thereby improving electrical characteristics of the capacitor.
Quick Actions:
Kim, Kyong. (2003). Method for forming a capacitor of a semiconductor device (U.S. Patent No. 6632683). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6632683
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile