San Jose, CA, United States of America

Ho Fang

This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ho Fang. Retrieved from https://idiyas.com/inventor/ho-fang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Ho Fang - Innovator in Electrostatic Charge Measurement

Introduction

Ho Fang is a notable inventor based in San Jose, California. He has made significant contributions to the field of electrostatic charge measurement. His innovative work has led to the development of a specialized tool that enhances the accuracy and efficiency of measuring electrostatic charges.

Latest Patents

Ho Fang holds a patent for an electrostatic charge measurement tool. This tool is designed to measure electrostatic charges on various surfaces, particularly in semiconductor applications. The patent describes a probe that can scan the surface of a target, such as an electrostatic chuck or semiconductor wafer. The probe is a non-contact device that can be adjusted in height and moved across the target's surface. This allows for in-situ measurements without the need to remove the target from its working environment.

Career Highlights

Ho Fang is currently employed at Intel Corporation, where he continues to work on advancements in electrostatic measurement technologies. His expertise in this area has positioned him as a valuable asset to the company and the industry.

Collaborations

Throughout his career, Ho Fang has collaborated with esteemed colleagues, including Subramani Iyer and Robert J Chroneos, Jr. These collaborations have furthered the development of innovative solutions in the field of electrostatics.

Conclusion

Ho Fang's contributions to electrostatic charge measurement technology exemplify his dedication to innovation. His work not only enhances measurement accuracy but also supports advancements in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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