Chofu, Japan

Hitoshi Wakabayashi

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hitoshi Wakabayashi. Retrieved from https://idiyas.com/inventor/hitoshi-wakabayashi-5kwvk99v

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Hitoshi Wakabayashi: Innovator in Semiconductor Technology

Introduction

Hitoshi Wakabayashi is a notable inventor based in Chofu, Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, showcasing his expertise through his innovative patents.

Latest Patents

Wakabayashi holds a patent for a semiconductor device that includes a first semiconductor layer and a second semiconductor layer with a wider band gap. This device features a source electrode and a drain electrode on the second semiconductor layer, with at least one of these electrodes having a plurality of protrusions in contact with the second semiconductor layer. Additionally, a gate electrode is positioned between the source and drain electrodes. This invention highlights his commitment to advancing semiconductor technology.

Career Highlights

Hitoshi Wakabayashi is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to contribute to various projects and innovations in semiconductor devices.

Collaborations

Wakabayashi has collaborated with notable colleagues, including Wataru Saito and Kazuo Tsutsui. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Hitoshi Wakabayashi is a prominent figure in the semiconductor industry, with a patent that reflects his innovative spirit and technical expertise. His contributions continue to influence the field and inspire future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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