The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Feb. 13, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Wataru Saito, Kawasaki Kanagawa, JP;
Kazuo Tsutsui, Yokohama Kanagawa, JP;
Hiroshi Iwai, Yokohama Kanagawa, JP;
Kuniyuki Kakushima, Yokohama Kanagawa, JP;
Hitoshi Wakabayashi, Chofu Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer and having a wider band gap than the first semiconductor layer, a source electrode and a drain electrode provided on the second semiconductor layer, wherein at least one of the source electrode and the drain electrode includes a plurality of protrusions on a side in contact with the second semiconductor layer, and a gate electrode provided between the source electrode and the drain electrode.