Kanonji, Japan

Hitoshi Suzuki

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Toyo Tanso Co., Ltd.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hitoshi Suzuki. Retrieved from https://idiyas.com/inventor/hitoshi-suzuki-q5hvtatm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Hitoshi Suzuki: Innovator in Ion Implantation Technology

Introduction

Hitoshi Suzuki is a notable inventor based in Kanonji, Japan. He has made significant contributions to the field of ion implantation technology, particularly through his innovative patent that addresses critical challenges in the industry.

Latest Patents

Hitoshi Suzuki holds a patent for a "Graphite member for beam-line internal member of ion implantation apparatus." This invention aims to provide a graphite member that can markedly reduce particles incorporated in a wafer surface in high current-low energy type ion implantation apparatuses. The graphite member features a bulk density of not less than 1.80 Mg/m³ and an electric resistivity of not more than 9.5 μΩ·m. Additionally, the R value obtained from the Raman spectrum of the graphite member is not more than 0.20, ensuring its effectiveness in the intended application.

Career Highlights

Hitoshi Suzuki is associated with Toyo Tanso Co., Ltd., where he has been instrumental in advancing the company's technological capabilities. His work has not only contributed to the company's reputation but has also played a vital role in enhancing the performance of ion implantation apparatuses.

Collaborations

Throughout his career, Hitoshi has collaborated with esteemed colleagues such as Kiyoshi Saito and Fumiaki Yokoyama. These collaborations have fostered a productive environment for innovation and have led to significant advancements in their respective fields.

Conclusion

Hitoshi Suzuki's contributions to ion implantation technology through his innovative patent demonstrate his commitment to improving industry standards. His work continues to influence the field and showcases the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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