The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Oct. 12, 2006
Kiyoshi Saito, Kanonji, JP;
Fumiaki Yokoyama, Kanonji, JP;
Hitoshi Suzuki, Kanonji, JP;
Atsuko Ando, Kanonji, JP;
Tetsuro Tojo, Osaka, JP;
Seiji Shinohara, Saijo, JP;
Kiyoshi Saito, Kanonji, JP;
Fumiaki Yokoyama, Kanonji, JP;
Hitoshi Suzuki, Kanonji, JP;
Atsuko Ando, Kanonji, JP;
Tetsuro Tojo, Osaka, JP;
Seiji Shinohara, Saijo, JP;
Toyo Tanso Co., Ltd., Osaka, JP;
Abstract
The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/mand an electric resistivity of not more than 9.5 μΩ·m. Preferably, the R value obtained by dividing D band intensity at 1370 cmby G band intensity at 1570 cmin the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.