Kanonji, Japan

Fumiaki Yokoyama


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Fumiaki Yokoyama: Innovator in Ion Implantation Technology

Introduction

Fumiaki Yokoyama is a notable inventor based in Kanonji, Japan. He has made significant contributions to the field of ion implantation technology, particularly through his innovative patent that addresses critical challenges in the industry. His work is characterized by a commitment to enhancing the performance and efficiency of ion implantation apparatuses.

Latest Patents

Yokoyama holds a patent for a "Graphite member for beam-line internal member of ion implantation apparatus." This invention aims to provide a graphite member that markedly reduces particles incorporated in a wafer surface in high current-low energy type ion implantation apparatuses. The graphite member features a bulk density of not less than 1.80 Mg/m³ and an electric resistivity of not more than 9.5 μΩ·m. Additionally, the R value obtained from the Raman spectrum analysis is not more than 0.20, indicating the quality of the graphite member.

Career Highlights

Yokoyama's career is marked by his association with Toyo Tanso Co., Ltd., where he has been instrumental in advancing the company's technological capabilities. His expertise in materials science and engineering has positioned him as a key figure in the development of innovative solutions for ion implantation processes.

Collaborations

Throughout his career, Yokoyama has collaborated with esteemed colleagues such as Kiyoshi Saito and Hitoshi Suzuki. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and the pursuit of groundbreaking innovations.

Conclusion

Fumiaki Yokoyama's contributions to ion implantation technology exemplify the impact of innovative thinking in addressing industry challenges. His patent for a graphite member showcases his dedication to improving the efficiency and effectiveness of ion implantation apparatuses. His work continues to influence the field and inspire future advancements.

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