Kanonji, Japan

Atsuko Ando



Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Atsuko Ando: Innovator in Ion Implantation Technology

Introduction

Atsuko Ando is a notable inventor based in Kanonji, Japan. She has made significant contributions to the field of ion implantation technology, particularly through her innovative patent that addresses critical challenges in the industry.

Latest Patents

Atsuko Ando holds a patent for a "Graphite member for beam-line internal member of ion implantation apparatus." This invention aims to provide a graphite member that can markedly reduce particles incorporated in a wafer surface in high current-low energy type ion implantation apparatuses. The graphite member features a bulk density of not less than 1.80 Mg/m³ and an electric resistivity of not more than 9.5 μΩ·m. Additionally, the R value obtained from the Raman spectrum of the graphite member is not more than 0.20, indicating its effectiveness in the intended application.

Career Highlights

Atsuko Ando is associated with Toyo Tanso Co., Ltd., where she has been instrumental in advancing the company's technological capabilities. Her work has not only contributed to the company's reputation but has also paved the way for further innovations in the field of ion implantation.

Collaborations

Atsuko has collaborated with notable colleagues such as Kiyoshi Saito and Fumiaki Yokoyama. These collaborations have fostered a productive environment for innovation and development within the company.

Conclusion

Atsuko Ando's contributions to ion implantation technology exemplify her dedication to innovation and excellence. Her patent reflects her commitment to solving industry challenges and enhancing technological advancements.

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