Hitoshi Mizuochi

Title: Hitoshi Mizuochi: Innovator in Semiconductor Laser Technology

Introduction

Hitoshi Mizuochi is a prominent inventor based in Itami, Japan. He has made significant contributions to the field of semiconductor laser technology, holding a total of 3 patents. His work focuses on enhancing the efficiency and performance of semiconductor laser devices.

Latest Patents

Mizuochi's latest patents include a semiconductor laser device and a method for producing such a device. The semiconductor laser device features a Zn-doped p-type semiconductor substrate, where over 81% of Zn dopant atoms are activated to produce carriers. This innovation reduces the internal loss due to free carrier absorption in the active layer and minimizes non-radiative recombinations of carriers. The method for producing a semiconductor laser device involves a current blocking structure with a p-n-p-n configuration, an active region buried in a stripe-shaped groove, and a diffraction grating on the waveguide layer.

Career Highlights

Hitoshi Mizuochi is associated with Mitsubishi Electric Corporation, where he continues to advance semiconductor technology. His work has been instrumental in developing more efficient laser devices that have applications in various industries.

Collaborations

Mizuochi has collaborated with notable colleagues, including Hideyo Higuchi and Kazuomi Yoshida. Their combined expertise has contributed to the success of their projects and innovations in semiconductor technology.

Conclusion

Hitoshi Mizuochi's contributions to semiconductor laser technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to improving the efficiency of laser devices, making a lasting impact in the field.