Mitsubishi Denki Kabushiki Kaisha

Hitoshi Mizuochi

Hideyo Higuchi

Yousuke Yamamoto

Kazuomi Yoshida

A semiconductor laser device includes a Zn-doped p type semiconductor substrate in which more than 81% of Zn dopant atoms are activated to produce carriers, and semiconductor layers epitaxially grown on the Zn-doped p type semiconductor substrate, including an active layer sandwiched between n type and p type cladding layers. Therefore, during the epitaxial growth of the semiconductor layers, diffusion of inactive Zn atoms from the substrate to semiconductor layers is reduced, with the result that the internal loss due to free carrier absorption in the active layer and the underlying p type cladding layer is reduced and non-radiative recombinations of carriers in the active layer are reduced.

Semiconductor laser device and production method therefor

A semiconductor laser device includes a current blocking structure having a p-n-p-n structure, provided on a first conductivity type semiconductor substrate, an active region buried in a stripe shaped groove produced in the current blocking structure, a lower cladding layer grown by liquid phase epitaxy approximately filling the stripe groove, an active layer on the lower cladding layer in the stripe groove, a waveguide layer on the active layer completely filling the groove, and a diffraction grating on the waveguide layer.

Method for producing a semiconductor laser device

In an optical semiconductor device in which a light emitting element and a light receiving element for monitoring light from the light emitting element are mounted integrally, a spherical lens is provided at a light receiving portion of the light receiving element, the lens having a light receiving area larger than that of said light receiving portion and the spherical surface of the spherical lens is oriented to the light emitting element.

Growing community of inventors

Itami, Japan

Hitoshi Mizuochi