Tokyo, Japan

Hitoshi Kobayashi

USPTO Granted Patents = 4 

Average Co-Inventor Count = 5.1

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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4 patents (USPTO):Explore Patents

Title: Hitoshi Kobayashi: Innovator in Plasma Processing Technology

Introduction

Hitoshi Kobayashi is a distinguished inventor based in Tokyo, Japan, recognized for his contributions to the field of plasma processing technology. With a notable patent to his name, he has demonstrated a commitment to advancing innovations in semiconductor manufacturing.

Latest Patents

Kobayashi's recent patent, titled "Plasma Processing Method," addresses an essential aspect of etching silicon films or polysilicon films containing boron. This method utilizes a mixed gas composed of a halogen gas, a fluorine-containing gas, and boron trichloride gas. The significance of this patent lies in its ability to enhance the etching rate while simultaneously reducing etching defects, crucial for high-quality semiconductor fabrication.

Career Highlights

Hitoshi Kobayashi is currently affiliated with Hitachi High-Technologies Corporation, where he plays a vital role in the research and development of advanced technologies. His innovative approach and technical expertise have positioned him as a key contributor to projects that push the boundaries of semiconductor processing.

Collaborations

Throughout his career, Kobayashi has had the opportunity to collaborate with talented colleagues, including Chaomei Liu and Masahito Mori. These collaborations have fostered a dynamic environment for innovation, allowing for the sharing of ideas and expertise in the field of plasma processing.

Conclusion

Hitoshi Kobayashi's innovative work in the realm of plasma processing exemplifies the impact of dedicated inventors in the semiconductor industry. His patent contributions not only enhance manufacturing processes but also pave the way for future advancements in technology.

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