The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Dec. 23, 2020
Applicant:
Hitachi High-tech Corporation, Tokyo, JP;
Inventors:
Chaomei Liu, Tokyo, JP;
Hitoshi Kobayashi, Tokyo, JP;
Masahito Mori, Tokyo, JP;
Ryota Takahashi, Tokyo, JP;
Assignee:
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32174 (2013.01); H01L 21/02129 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract
In a plasma processing method for plasma etching a silicon film or polysilicon film containing boron, the polysilicon film containing boron is etched by using a mixed gas of a halogen gas, a fluorine-containing gas, and a boron trichloride gas. According to plasma processing method, it is possible to improve the etching rate and reduce etching defects when plasma etching a silicon film or polysilicon film containing boron.