The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Apr. 11, 2022
Hitachi High-tech Corporation, Tokyo, JP;
Mai Isomoto, Tokyo, JP;
Hitoshi Kobayashi, Tokyo, JP;
Ryota Takahashi, Tokyo, JP;
Satoshi Une, Tokyo, JP;
Hitachi High-Tech Corporation, Tokyo, JP;
Abstract
An object of the invention is to provide a plasma processing method for preventing generation of deposition from an underlying metal film and attaining an anisotropic shape in hard mask etching. The plasma processing method for forming a mask using a film to be etched whose underlying layer is a metal film according to the invention includes: a first step of etching, using a plasma generated by mixed gas containing Ogas, CHFgas, NFgas, Ar gas, and He gas, while supplying pulse-modulated radio frequency power to a sample stage on which a sample having the film to be etched is placed; and a second step of etching while supplying continuous wave (CW) radio frequency power to the sample stage after the first step. The film to be etched is a TEOS film and a silicon nitride film, and the continuous wave (CW) radio frequency power is smaller than a product of the pulse-modulated radio frequency power and a pulse-modulated duty ratio and is smaller than 50 W.