Company Filing History:
Years Active: 2014-2015
Title: Hitomi Fujimoto: Innovator in Non-Volatile Memory Technologies
Introduction
Hitomi Fujimoto is a prominent inventor based in Yokkaichi, Japan. She has made significant contributions to the field of non-volatile memory technologies, holding a total of 3 patents. Her innovative work focuses on enhancing electrical isolation and filling techniques in memory structures.
Latest Patents
Fujimoto's latest patents include groundbreaking methods for air gap isolation in non-volatile memory using sacrificial films. This invention provides electrical isolation by forming air gaps with materials that have differing etch rates. The process involves using flowable chemical vapor deposition to create high etch rate films, which are then cured to enhance their etch rate. Additionally, she has developed a method for forming crack-free gap fills in structures, ensuring that the flowable film can fill gaps without forming cracks, thanks to the balance of tensile and compressive stresses.
Career Highlights
Throughout her career, Fujimoto has worked with notable companies such as SanDisk 3D LLC and SanDisk Technologies Inc. Her expertise in memory technology has positioned her as a key player in the industry, contributing to advancements that improve the performance and reliability of memory devices.
Collaborations
Fujimoto has collaborated with talented individuals in her field, including Hiroaki Iuchi and Chao Feng Yeh. These partnerships have fostered innovation and have been instrumental in the development of her patented technologies.
Conclusion
Hitomi Fujimoto's contributions to non-volatile memory technologies exemplify her innovative spirit and dedication to advancing the field. Her patents reflect a commitment to solving complex challenges in memory design and fabrication.