Company Filing History:
5 out of 21,351 
5 out of 52 Years Active: 1995-2000
Title: Hisayuki Nishimura: Innovator in Thin-Film Transistor Technology
Introduction
Hisayuki Nishimura is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of thin-film transistors. With a total of five patents to his name, Nishimura's work has had a lasting impact on the industry.
Latest Patents
Nishimura's latest patents focus on the design and manufacturing methods of thin-film transistors. One of his notable inventions is a thin-film transistor that is covered with a first silicon nitride film formed by an LPCVD method. Additionally, a first silicon oxide film is created on the first silicon nitride film, followed by a silicon nitride film that serves as a passivation layer, formed by a plasma CVD method. This innovative approach enhances the performance and reliability of thin-film transistors.
Career Highlights
Throughout his career, Nishimura has worked with several esteemed companies, including Mitsubishi Electric Corporation and Ryoden Semiconductor System Engineering Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Nishimura has collaborated with notable colleagues in the field, including Shigenobu Maeda and Shigeto Maegawa. These partnerships have fostered a collaborative environment that has led to innovative solutions in thin-film transistor technology.
Conclusion
Hisayuki Nishimura's contributions to the field of thin-film transistors exemplify his dedication to innovation and excellence. His patents and collaborations continue to influence the semiconductor industry, showcasing the importance of his work.