The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 1995
Filed:
Feb. 18, 1994
Applicant:
Inventors:
Assignees:
Ryoden Semiconductor System Engineering Corporation, both of, JP;
Mitsubishi Denki Kabushiki Kaisha, both of, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257640 ; 257 56 ; 257 58 ; 257285 ; 257347 ; 257649 ;
Abstract
A thin-film transistor (3, 5a, 5b and 5c) is covered with a first silicon nitride film (9) formed by an LPCVD method. A first silicon oxide film (6) is formed on the first silicon nitride film (9). A second silicon nitride film (7), i.e., passivation film which is formed by a plasma CVD method is provided on the first silicon oxide film (6). In addition, the thin-film transistor includes a semiconductor layer covering a gate electrode. The semiconductor layer includes source, drain and active regions. The active region preferably includes a smaller amount of fluorine than the gate electrode.