Toyama, Japan

Hisashi Nomura

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Kokusai Electric Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisashi Nomura. Retrieved from https://idiyas.com/inventor/hisashi-nomura-9ykdlsk4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hisashi Nomura: Innovator in Semiconductor Technology

Introduction

Hisashi Nomura is a prominent inventor based in Toyama, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative approaches to gas cleaning methods.

Latest Patents

Hisashi Nomura holds 1 patent for a gas cleaning method, which includes several key processes. The method involves removing a first metal element from a process chamber by supplying a chlorine-containing gas without the presence of an oxygen-containing gas. Following this, a second metal element is removed by introducing an oxygen-containing gas into the chamber, ensuring that the second step occurs after the first.

Career Highlights

Nomura is associated with Kokusai Electric Corporation, a leading company in the semiconductor manufacturing industry. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor device production.

Collaborations

Hisashi Nomura has collaborated with notable colleagues, including Takahiro Kobayashi and Iwao Nakamura. Their combined expertise has contributed to advancements in semiconductor technologies.

Conclusion

Hisashi Nomura's innovative work in gas cleaning methods showcases his dedication to improving semiconductor manufacturing processes. His contributions continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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