Kohfu, Japan

Hisashi Arakawa


Average Co-Inventor Count = 10.0

ph-index = 4

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 2000-2004

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4 patents (USPTO):Explore Patents

Title: Hisashi Arakawa: Innovator in Semiconductor Technology

Introduction

Hisashi Arakawa is a prominent inventor based in Kohfu, Japan, known for his significant contributions to semiconductor technology. With a total of four patents to his name, Arakawa has made notable advancements in the manufacturing processes of semiconductor devices.

Latest Patents

Hisashi Arakawa's latest patents include a process for manufacturing a semiconductor wafer, a semiconductor wafer itself, a process for manufacturing a semiconductor integrated circuit device, and the semiconductor integrated circuit device. His innovative approach involves forming an epitaxial layer over a semiconductor substrate body that contains an impurity of a predetermined conduction type. This layer contains an impurity of the same conduction type and concentration as the original impurity. Following this, a well region is created with the same conduction type, where the impurity concentration is gradually lowered depthwise within the epitaxial layer. This well region is essential for forming the gate insulating films of MIS-FETs.

Career Highlights

Throughout his career, Hisashi Arakawa has worked with leading companies in the semiconductor industry, including Hitachi, Ltd. and Renesas Technology Corporation. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking technologies in the field.

Collaborations

Arakawa has collaborated with notable colleagues such as Hiroto Kawagoe and Tatsumi Shirasu. These partnerships have further enhanced his work and innovation in semiconductor technology.

Conclusion

Hisashi Arakawa's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.

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