The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2003
Filed:
Dec. 05, 2001
Hiroto Kawagoe, Tokyo, JP;
Tatsumi Shirasu, Kawasaki, JP;
Shogo Kiyota, Tokyo, JP;
Norio Suzuki, Higashimurayama, JP;
Eiichi Yamada, Yamaguchi, JP;
Yuji Sugino, Yamanashi, JP;
Manabu Kitano, Yanai, JP;
Yoshihiko Sakurai, Yamanashi, JP;
Takashi Naganuma, Yamanashi, JP;
Hisashi Arakawa, Kohfu, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS·FETs.