Location History:
- Kanagawa-ken, JP (2000)
- Kawasaki, JP (2005 - 2009)
Company Filing History:
Years Active: 2000-2009
Title: Hisao Yoshimura: Innovator in Semiconductor Technology
Introduction
Hisao Yoshimura is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and manufacturing processes of semiconductor devices.
Latest Patents
One of Hisao Yoshimura's latest patents is titled "Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same." This invention provides a semiconductor device that includes a semiconductor substrate, a gate insulating film, a gate electrode, and a source-drain diffusion layer. A silicide film is formed on both the gate electrode and the source-drain diffusion layer, with the silicide film on the gate electrode being thicker. The manufacturing method involves forming a gate electrode on a gate insulating film, followed by the formation of a source-drain diffusion layer. Atoms that inhibit silicidation are selectively introduced into the source-drain diffusion layer, and a high melting point metal film is applied. This film is then converted into silicide films selectively on the gate electrode and the source-drain diffusion layer, allowing for improved semiconductor device performance.
Career Highlights
Hisao Yoshimura is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His innovative work has contributed to advancements in semiconductor manufacturing and design, making him a valuable asset to his organization.
Collaborations
Hisao Yoshimura has collaborated with notable coworkers, including Katsura Miyashita and Mariko Takagi. Their combined expertise has fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Hisao Yoshimura's contributions to semiconductor technology exemplify the impact of innovation in the field. His patents and collaborative efforts continue to shape the future of semiconductor devices, highlighting the importance of research and development in technology.