Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same

Abstract

The invention provides a semiconductor device, and a manufacturing method, comprising a semiconductor substrate, a gate insulating film, a gate electrode, and a source-drain diffusion layer. A silicide film is formed on the gate electrode and the source-drain diffusion layer. The silicide film is thicker on the gate electrode than on the source-drain diffusion layer. The manufacturing method comprises forming a gate electrode on a gate insulating film, followed by forming a source-drain diffusion layer. Then, atoms inhibiting a silicidation are selectively introduced into the source-drain diffusion layer, and a high melting point metal film is formed on the gate electrode and the source-drain diffusion layer. The high melting point metal film is converted into silicide films selectively on the gate electrode and the source-drain diffusion layer. The method permits retarding the formation of the silicide film on the source-drain diffusion layer to obtain a semiconductor device in which the silicide film on the gate electrode is thicker than the silicide film on the source-drain diffusion layer.